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The 31st International Conference on Defects in Semiconductors will be an online event from July 26 to July 30, 2021.

About the conference

The conference promotes a fundamental understanding of point and extended defects in semiconductors, including electrical, vibrational, optical, and magnetic phenomena. Unique among international conferences, ICDS covers a range of materials, with defects as the central organizing principle. This approach is extremely fruitful for advancing knowledge of emerging materials such as wide-band-gap semiconductors, doped nanoparticles, and 2D materials, as well as exciting developments in “old” materials such as silicon. With this we hope to continue the ICDS tradition and facilitate stimulating discussions on defects in materials for micro- and optoelectronics, quantum computing, photovoltaics, and other applications.
Read more about the conference.


The program can be found here


Topics include experimental and theoretical research in the following areas:

  • Point and line defects in bulk crystals, thin films, nanocrystals, and 2D materials
  • Defect-induced optical, electronic, magnetic, and vibrational properties
  • Single-defect phenomena
  • Advances in characterization, computational methods, growth, and processing
  • Spectroscopy of defect centers
  • Diffusion, thermal transport, and isotope effects
  • Applications to devices such as light-emitting diodes and solar cells
  • Nanotechnology and materials science of functional defects

A broad range of materials will be discussed, including:

  • Group-IV semiconductors and their alloys
  • III-V and II-VI compound semiconductors
  • Oxide and nitride semiconductors
  • Organic semiconductors and graphene-based materials
  • Topological insulators

List of confirmed invited speakers.


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