ICDS 31

Oslo opera house and port

The 31st International Conference on Defects in Semiconductors will be a hybrid event from July 26 to July 30, 2021, with both online participation and physical contributions in Oslo, Norway. 

New abstract deadline is April 12.

About the conference

The conference promotes a fundamental understanding of point and extended defects in semiconductors, including electrical, vibrational, optical, and magnetic phenomena. Unique among international conferences, ICDS covers a range of materials, with defects as the central organizing principle. This approach is extremely fruitful for advancing knowledge of emerging materials such as wide-band-gap semiconductors, doped nanoparticles, and 2D materials, as well as exciting developments in “old” materials such as silicon. With this we hope to continue the ICDS tradition and facilitate stimulating discussions on defects in materials for micro- and optoelectronics, quantum computing, photovoltaics, and other applications.
Read more about the conference.

Corona virus (covid-19)

In 2021 ICDS will be hosted by the University of Oslo, Norway. However, in the current situation the conference is planned as a hybrid event, with both physical and online participation. The organizing committee will monitor the development of the pandemic closely, and the extent of the on-site contributions and events will depend on the situation during the spring/summer.
Find updated information about traveling to Norway (helsenorge.no).

Scope

Topics include experimental and theoretical research in the following areas:

  • Point and line defects in bulk crystals, thin films, nanocrystals, and 2D materials
  • Defect-induced optical, electronic, magnetic, and vibrational properties
  • Single-defect phenomena
  • Advances in characterization, computational methods, growth, and processing
  • Spectroscopy of defect centers
  • Diffusion, thermal transport, and isotope effects
  • Applications to devices such as light-emitting diodes and solar cells
  • Nanotechnology and materials science of functional defects

A broad range of materials will be discussed, including:

  • Group-IV semiconductors and their alloys
  • III-V and II-VI compound semiconductors
  • Oxide and nitride semiconductors
  • Organic semiconductors and graphene-based materials
  • Topological insulators

List of confirmed invited speakers.

Sponsors

The Research Council of Norway logo
IUPAP logo
The picture has a red and orange background. To the right "Journal of Applied Physics" is written in white letters. To the left "Spesical topic: Defects in Semiconductors" is written.

Contact us

Get in touch with us at icds2021@smn.uio.no