Special Topic on Defects in Semiconductors to be published in Journal of Applied Physics
The ICDS Committee and the Editor-in-Chief of Journal of Applied Physics are pleased to announce that Journal of Applied Physics will feature a Special Topic on Defects in Semiconductors. This collection of articles aims to deliver state-of-the-art findings and understanding of fundamentals of defects in semiconductors. The Guest Editors for this Special Topic are Lasse Vines, Andrej Yu. Kuznetsov and Eduard Monakhov (University of Oslo).
The Journal of Applied Physics Special Topic collection on Defects in Semiconductors welcomes submissions from both the ICDS and the broader community of researchers working in the field. Please note that manuscripts considered for publication as Articles in Journal of Applied Physics are expected to meet Journal of Applied Physics' standards of acceptance, i.e. to report on original and timely results that significantly advance understanding in the current status of contemporary applied physics; material that is exclusively review in nature will not be considered for publication, however Perspective and Tutorial papers will be included on an invitation-only basis. Manuscripts submitted for consideration in this Special Topic will undergo Journal of Applied Physics' the standard peer-review process. Journal of Applied Physics Editors’ Team will issue final decisions on the submitted manuscripts.
A call for papers to the broad community of defects in semiconductors will be issued in June, 2021 and will be posted also on this website. Deadline for submission will be October 31st, 2021. Accepted manuscripts received within the deadline will be published as ready in Journal of Applied Physics and promoted together as a collection. Further updates will be posted on the ICDS website as they will be available.
We look forward to receiving submissions for the Special Topic from the ICDS community!
The Guest Editors,
Lasse Vines, Andrej Kuznetsov and Eduard Monakhov